| 摘要 |
A method for producing a photo voltaic device, wherein the device comprises a base member including a substrate. A reflecting layer and a reflection enhancing layer are formed on the base member. A p-i-n structure formed of n-type, i-type and p-type semiconductor layers containing silicon atoms having a non-single crystal structure, is also formed on the base member at least once. The method comprises the steps of (a) depositing a material constituting the reflecting layer, at a substrate temperature of from 200 DEG to 500 DEG C. to form the reflecting layer; (b) thereafter lowering the substrate temperature to 100 DEG C. or below; and (c) thereafter depositing a material constituting the reflection enhancing layer on the reflecting layer at a substrate temperature of from 200 DEG to 400 DEG C., to form the reflection enhancing layer.
|
