| 摘要 |
A method is provided for forming a transistor on a substrate. In constructing the transistor, an insulative layer of material is formed on the substrate, and a gate template structure is formed on top of the insulative layer of material. The gate template structure has a length that is substantially equal to a length of a narrowest point of a gate structure for the transistor and resides over a region of the substrate which will be overlaid by the gate structure. Next, a field oxide is grown from the insulative layer of material to extend outward from the gate template structure and upward from the insulative layer of material. The gate template structure is removed to form a gate structure cavity that extends through the field oxide and is defined by cavity sidewalls and a base. In the gate structure cavity, a gate structure is masklessly formed. After the gate structure is completed, ions are introduced into the substrate to form the source and drain for the transistor.
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