| 摘要 |
A method for forming a capacitor of a dynamic random access memory cell is disclosed. The method includes forming a polysilicon layer (124) over a semiconductor layer, wherein at least a portion of the polysilicon layer is communicated to the substrate, and then patterning to etch a portion of the polysilicon layer. A mask layer (126) is formed on a portion of the polysilicon layer, and at least one silicon oxide region (128A) is formed in the polysilicon not covered by the mask layer. After etching a portion of the polysilicon layer using the silicon oxide region as an etch mask, a capacitor dielectric layer (136) is formed on the polysilicon layer, and a conductive layer (138) is formed on the capacitor dielectric layer.
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