发明名称 |
Double spacer salicide MOS process and device |
摘要 |
A double spacer salicide MOS device structure and a process for preparing such a device. The double spacer salicide device has a LDD structure. The first sidewall spacer disposed adjacent to the gate structure of the MOS device is higher than the gate. During the salicide process, the first sidewall spacer is used to effectively isolate the gate from the source/drain. The second sidewall spacer disposed adjacent to the first sidewall spacer is used to form the LDD structure.
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申请公布号 |
US5824588(A) |
申请公布日期 |
1998.10.20 |
申请号 |
US19960719139 |
申请日期 |
1996.09.24 |
申请人 |
WINBOND ELECTRONICS CORP. |
发明人 |
LIU, HAN-HSING |
分类号 |
H01L21/336;(IPC1-7):H01L21/336;H01L21/320 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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