| 摘要 |
A method is shown for manufacturing a semiconductor device in which a silicon oxide film acts as an insulating film for electrically isolating conductive layers included in the semiconductor device. An oxynitride silicon-oxide-like film is formed containing fluorine, carbon and nitrogen and having a given dielectric constant by CVD method using a source gas which contains at least silicon, nitrogen, carbon, oxygen and fluorine contributors. By controlling the ratio of nitrogen to oxygen in the source gas as used in the CVD method, the ultimate nitrogen, carbon and fluorine concentrations in the film can be controlled and hence the dielectric constant of the film so produced. |
