| 摘要 |
A method of compensation to an electron beam dose for exposing an electron beam through an electron dose mask to an object is provided, which comprises the steps of measuring an actual opening area of the electron dose mask, and setting an optimum dose to the electron beam dose system with reference to the measured actual opening area of the electron dose mask, thereby forming on a wafer a pattern exactly corresponding to the designed pattern even if the electron beam mask has an opening pattern differing in size from the designed pattern.
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