发明名称 METHOD OF PRODUCING SYNTHETIC DIAMOND
摘要 A method for synthesizing a diamond by vapor deposition permits selectively growing high quality diamond on any desired region of a base material at a lower temperature compared to respective conventional temperatures starting with a raw material gas which is prepared by diluting a compound containing carbon atoms such as methane with hydrogen gas. This diluted raw material gas is irradiated with a laser beam satisfying at least one of the following two conditions, namely a spread angle of 1 x 10-1 mrad to 5 x 10-1 mrad during oscillation or a half-power band width of 1 x 10-4 nm to 1 x 10-1 nm with respect to a band width of an oscillation having a wavelength of 190 nm to 360 nm. Diamond is deposited on the base material from a chemical species generated by such irradiation.
申请公布号 CA2100132(C) 申请公布日期 1998.10.20
申请号 CA19932100132 申请日期 1993.07.08
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 OTA, NOBUHIRO;FUJIMORI, NAOJI;WATANABE, KENICHI
分类号 C23C16/26;C23C16/04;C23C16/27;C23C16/48;C30B25/02;C30B29/04;(IPC1-7):C30B29/04 主分类号 C23C16/26
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