发明名称 |
METHOD OF PRODUCING SYNTHETIC DIAMOND |
摘要 |
A method for synthesizing a diamond by vapor deposition permits selectively growing high quality diamond on any desired region of a base material at a lower temperature compared to respective conventional temperatures starting with a raw material gas which is prepared by diluting a compound containing carbon atoms such as methane with hydrogen gas. This diluted raw material gas is irradiated with a laser beam satisfying at least one of the following two conditions, namely a spread angle of 1 x 10-1 mrad to 5 x 10-1 mrad during oscillation or a half-power band width of 1 x 10-4 nm to 1 x 10-1 nm with respect to a band width of an oscillation having a wavelength of 190 nm to 360 nm. Diamond is deposited on the base material from a chemical species generated by such irradiation.
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申请公布号 |
CA2100132(C) |
申请公布日期 |
1998.10.20 |
申请号 |
CA19932100132 |
申请日期 |
1993.07.08 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
OTA, NOBUHIRO;FUJIMORI, NAOJI;WATANABE, KENICHI |
分类号 |
C23C16/26;C23C16/04;C23C16/27;C23C16/48;C30B25/02;C30B29/04;(IPC1-7):C30B29/04 |
主分类号 |
C23C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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