发明名称 |
Three-terminal silicon synaptic device |
摘要 |
A three-terminal silicon MOS transistor with a time-varying transfer function is provided which may operate both as a single transistor analog learning device and as a single transistor non-volatile analog memory. The time-varying transfer function is achieved by adding or removing electrons from the fully insulated floating gate of an N-type MOS floating gate transistor. The transistor has a control gate capacitively coupled to the floating gate; it is from the perspective of this control gate that the transfer function of the transistor is modified. Electrons are removed from the floating gate via Fowler-Nordheim tunneling. Electrons are added to the floating gate via hot-electron injection.
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申请公布号 |
US5825063(A) |
申请公布日期 |
1998.10.20 |
申请号 |
US19960690198 |
申请日期 |
1996.07.26 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
DIORIO, CHRISTOPHER J.;HASLER, PAUL E.;MINCH, BRADLEY A.;MEAD, CARVER A. |
分类号 |
G11C27/00;H01L29/788;(IPC1-7):H01L29/788 |
主分类号 |
G11C27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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