| 发明名称 |
Monitoring method and apparatus of surface area of semiconductor wafer |
| 摘要 |
A surface-roughened polysilicon wafer is submerged in an electrolytic solution, and a voltage is applied between the measured wafer and a reference wafer submerged in the same electrolytic solution. The surface area of the surface-roughened polysilicon wafer is determined from the current with excellent accuracy.
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| 申请公布号 |
US5825668(A) |
申请公布日期 |
1998.10.20 |
| 申请号 |
US19970792818 |
申请日期 |
1997.01.30 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAKAO, SHUJI |
| 分类号 |
C25D11/32;G01B7/32;H01L21/66;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;(IPC1-7):G01B13/22 |
主分类号 |
C25D11/32 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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