| 摘要 |
A semiconductor device in the form of a prism is described. The device has a top face 2, and two side faces 3, 4. The two side faces 3, 4 each make with the top face 2 a substantially equal acute angle in the device, and the parts of the device defining the two side faces comprise semiconductor material. Such a device is especially suitable for location in a v-groove on a semiconductor substrate. If the device and the substrate have the same crystal structure, then the device angle and the v-groove angle can be matched by selecting the same crystal plane in each material. This technique can thus be used for InP semiconductor lasers located within silicon v-grooves. Optical fibres can be passively aligned with such semiconductor devices in v-grooves. Methods of fabricating such semiconductor devices are discussed. <IMAGE> |
