Plasma processing method and apparatus for the deposition of thin films,申请号EP19890301126-传众专利搜索

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发明名称	Plasma processing method and apparatus for the deposition of thin films
摘要
申请公布号	EP0327406(B1)	申请公布日期	1998.10.14
申请号	EP19890301126	申请日期	1989.02.06
申请人	SEMICONDUCTOR ENERGY LABORATORY CO., LTD.	发明人	YAMAZAKI, SHUNPEI;TSUCHIYA, MITSUNORI;KAWANO, ATSUSHI;IMATOU, SHINJI;NAKASHITA, KAZUHISA;HAMATANI, TOSHIJI;INUSHIMA, TAKASHI;ITOU, KENJI
分类号	C23C16/517;H01J37/32;H01J37/34;(IPC1-7):H01J37/32	主分类号	C23C16/517
代理机构		代理人
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