| 摘要 |
<p>The present invention provides a semiconductor device with small space factor, which controls the application of voltages higher than a power supply voltage to internal circuits. This device includes a first transistor provided with a semiconductor substrate of one conductive type, a first region of second conductivity type formed in the semiconductor substrate, a second region of the second conductivity type formed independent of the first region, a third region of the first conductivity type formed in the first region, and a fourth region of the first conductivity type formed in the first region independent of the third region, having the first region as its back gate, and a second transistor provided with a fifth region of the first conductivity type formed in the second region and a sixth region of the first conductivity type formed in the second region independent of the fifth region, having the second region as its back gate, wherein a back gate bias voltage higher than the power supply voltage applied to the second region is applied to the first region. <IMAGE></p> |
