| 发明名称 |
Processes depending on plasma generation |
| 摘要 |
<p>Anisotropic plasma etching is accomplished utilizing a helical resonator operated at relatively low gas pressure. The use of this combination yields an extremely high flux of ionic species with resulting rapid anisotropic etching. A helical resonator in conjunction with suitable precursors is also quite useful for plasma induced deposition. <IMAGE></p> |
| 申请公布号 |
EP0871199(A2) |
申请公布日期 |
1998.10.14 |
| 申请号 |
EP19980201707 |
申请日期 |
1989.12.13 |
| 申请人 |
AT&T CORP. |
发明人 |
FLAMM, DANIEL LAWRENCE;JOHNSON, WAYNE LEE;IBBOTSON, DALE EDWARD |
| 分类号 |
H01L21/302;H01J37/32;H01L21/3065;H01L21/31;H05H1/18;H05H1/46;(IPC1-7):H01J37/32 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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