| 摘要 |
<p>There is provided a power MOSFET in which a plurality of base regions are formed on a surface of a semiconductor region serving as a drain region, convex drain regions are formed on the semiconductor region, and a part of the convex drain regions is formed of wide bandgap semiconductor having a bandgap wider than that of the semiconductor region. The wide bandgap semiconductor is connected to the drain electrodes and a part of the convex drain regions has a structure sandwiched by gate electrodes. If the semiconductor region is formed of silicon, silicon carbide (SiC) is representatively preferable material as the wide bandgap semiconductor.</p> |
