发明名称 Rectifying transfer gate circuit
摘要 A rectifying transfer gate circuit includes first and second field effect transistors and one diode. The source of the first field effect transistor is coupled to a first input node and the gate thereof is coupled to a second input node. Meanwhile, the source of the second field effect transistor is coupled to the second input node and the gate thereof is coupled to the first input node. The diode is coupled between the common drain of the first and second field effect transistors and an output node, so as to increase the speed of the operation in the application circuit utilizing the above rectifying transfer gate circuit.
申请公布号 US5822235(A) 申请公布日期 1998.10.13
申请号 US19970879216 申请日期 1997.06.19
申请人 SAMSUNG ELECTRONICS CO. LTD. 发明人 NAKASHIMA, TAKASHI
分类号 H01L21/8234;G06F7/50;G06F7/501;H01L27/07;H01L27/088;H03K17/687;H03K19/0944;H03K19/21;(IPC1-7):G06F7/50 主分类号 H01L21/8234
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