发明名称 Charge pump circuit having different threshold biases of the transistors
摘要 In a charge pump circuit having a plurality of transistors connected in a diode configuration, the threshold voltage of the transistors are prevented from being increased due to a back-bias effect by having the threshold biases of the transistors adjusted. The circuit, therefore, ensures a desired voltage boosting ability.
申请公布号 US5821805(A) 申请公布日期 1998.10.13
申请号 US19970884333 申请日期 1997.06.27
申请人 NEC CORPORATION 发明人 JINBO, TOSHIKATSU
分类号 H01L27/04;G11C5/14;H01L21/822;H01L27/02;H01L29/78;H01L29/92;H02M3/07;H03K17/06;(IPC1-7):G05F3/02 主分类号 H01L27/04
代理机构 代理人
主权项
地址