发明名称 |
Plasma processing method and apparatus |
摘要 |
In a vapor phase apparatus such as a plasma chemical vapor deposition (CVD) having a pair of electrodes, a surface of one of the electrodes has an uneven shape (concave portion and convex portion). An interval between the electrodes is 10 mm or less. A density of a convex portion is increased in a center portion of the electrode. An aspect ratio of the uneven shape is increased from a peripheral portion of the electrode to a center portion of the electrode. The aspect ratio represents a ratio (b/a) of a pitch (a) and a height (b) of the convex portion.
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申请公布号 |
US5820947(A) |
申请公布日期 |
1998.10.13 |
申请号 |
US19970820985 |
申请日期 |
1997.03.19 |
申请人 |
SEMICONDUTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ITOH, KENJI |
分类号 |
B01J19/08;C23C16/26;C23C16/30;C23C16/50;C23C16/505;H01J37/32;H01L21/205;H05H1/24;(IPC1-7):H05H1/24 |
主分类号 |
B01J19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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