| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a new structure related to a method of forming an auxilia ry capacity of picture element in an active matrix type liquid crystal display device using a top gate type or a top gate type thin film transistor(TFT). SOLUTION: A 1st insulating film 20 having a high dielectric constant like silicon nitride is formed covering a source line 18 and a metallic wiring 19 in the same layer, and further thereon, a 2nd insulating layer 21 excellent in flatness is formed. And, the 2nd insulating film 21 is etched to make an aperture part 22, and the 1st insulating film 20 is made to be selectively exposed. A conductive film 23 functioning as a shading film is formed thereon, and between this and the metallic wiring 19, a capacitance having the insulating film 20 as a dielectric substance is formed, and this is used as an auxiliary capacitance. Further, the aperture ratio is substantially improved by selectively providing the auxiliary capacitance in parts much influenced by disclination.</p> |
