| 摘要 |
PROBLEM TO BE SOLVED: To deposit an oxidation preventing film which prevents the oxidation of copper wiring used for semiconductor wiring by a means simpler than the conventional means without increasing the resistance of the copper. SOLUTION: In a semiconductor device, an SiO2 oxide film, which is formed as an insulating film 2 and an interlayer insulating film 3 are successively formed on a semiconductor substrate 1, and the interlayer insulating film 3 has selectively formed openings in which copper wiring 9 coated with an oxidation preventing film 5 is formed. Since the oxidation preventing film 5 has become a copper sulfide, it becomes unnecessary to form another oxidation preventing film containing no copper and, therefore, a vacuum process can be simplified or the need for a high-temperature heat-treating process can be eliminated. |
