| 摘要 |
PROBLEM TO BE SOLVED: To measure the spacial intensity distribution of cyclotron radiation (SR) in real time and in the same state as actual exposure environment by forming a photoelectric conversion element converting incident X-ray intensity to the intensity of electric output signal on a semiconductor substrate. SOLUTION: On an Si wafer 17, a CCD element 8 with the same area as its exposure region is formed. Simultaneously, a circuit 9 driving and controlling the CCD element 8 and an I/O circuit 10 to be an interface with exterior are formed around it. Furthermore, an infrared emission/reception element and a slab type antenna 11 for transmitting to and receiving from the exterior are constituted. Here, the CCD element 8 converts X-ray to electrons at a constant quantum efficiency, measure the electron quantity and detects the X-ray intensity. By directly forming the CCD element 8 on the Si wafer 17 in this manner, the measurement of SR in the same state as an ordinary exposure wafer becomes possible. Also, by taking out the output of the small CCD element 8 in turn, the spacial intensity distribution can be measured. |
