| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory which is provided with a highly reliable non-volatile memory element and can accurately read out information even if defective holding data occurs. SOLUTION: A memory cell M1 included in a memory cell array 70 is constituted with non-volatile memory elements having floating gate electrode layers. When a read-out discriminating circuit 77 receives a discriminating signal, receives data from the memory cell array 70 and discriminates a holding state of data of non-volatile memory elements. A reference voltage generating circuit 78 receives a control signal corresponding to a discriminated result of the read- out discriminating circuit 77 by one to one, and adjusts reference voltage Vref supplied to the memory cell M1. |
