| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and equipment for manufacturing a semiconductor device for downsizing the equipment by integrating the polishing process with the particle removal processes without damaging a surface to be polished in polishing and causing the center part to be recessed and without reducing the reliability in a semiconductor and a manufacturing yield due to the retention of polishing particles since adhered particles can be easily remored after polishing is completed. SOLUTION: When an Al alloy film, an Si film, an Si oxide film, and a nitride film are polished (CMP), a particle consisting of an organic macromolecular compound or a particle with carbon as a main constituent is used as a polishing particle. A resin that can polish a surface to be polished and can be ashed and decomposed by active rays containing ultraviolet rays may preferably be used but a methacrylic resin and polystyrene resin have spherical particles and have improved dispersion property and can be stored for a long term so that they are especially effective. After polishing using the above resin particle, active rays containing a main wavelength of 254 nm from a low-pressure mercury lamp are applied to a film to be polished and an optimum time is determined from light source output and a distance to a substrate. The rays are preferably applied in air at 50-200 deg.C. The removal of particles by decomposition under the presence of ozone proceeds. |
