| 摘要 |
PROBLEM TO BE SOLVED: To efficiently remove Cr film residual residue on a halftone film by using a correction mask having a light shielding pattern corresponding to a light shielding region other than the device region of a halftone phase shifting mask to be corrected. SOLUTION: This correction mask is provided with a light shielding film 3 in a region other than that corresponding to the device region 8, to make the device region 8 of the halftone phase shifting mask to be corrected 4 a translucent region, on a transparent substrate 1. In other words, when a positive photoresist 11 is used at the time of correcting the halftone phase shifting mask 4, the light shielding film 3 is provided in the region except one corresponding to the device region 8 on the transparent substrate 1, so that the device region 8 of the halftone phase shifting mask 4 becomes the translucent region. Thus, in a single correcting process, all defects, that is, all light shielding film recidus 10 can be removed. |
