| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of narrowed current flow in a semiconductor layer by a method wherein the film thickness in one conductivity type semiconductor layer is formed thinner than that in the other parts, thus preventing the variation of light emission of the light emission element and the decrease of a product life. SOLUTION: The insular semiconductor layers 2 are formed by firstly forming one conductivity type semiconductor layer 2a and the inverse conductivity type semiconductor layer 2b on a semiconductor substrate 1 to be insularly etched away. Besides, the parts of the inverse conductivity type semiconductor layer 2b, a clad layer 23a and an ohmic contact layer 22a are etched way so that the film thickness of the electrode connecting part of the ohmic contact layer 2a of the one conductivity type semiconductor layer 2a may be made thinner than that in the other regions. Through these procedures, the current running out of individual electrode 4 is intercepted by the lower part of a common electrode 5 for increasing the expansion of the light emitting strength thereby enabling the increase in the degradation factor to be suppressed. |
