发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY
摘要 PROBLEM TO BE SOLVED: To improve the adhesion of an unexposed part to a substrate without considerably deteriorating dry etching resistance by incorporating a compd. generating an acid when degraded and a specified resin. SOLUTION: This photoresist compsn. contains a compd. generating an acid when degraded by irradiation with active light or radiation and a resin having repeating structural units represented by formula I and having groups which are decomposed by the action of the acid and increase solubility in an alkali developer. In the formula I, R1 is H or alkyl, preferably methyl or ethyl, especially preferably methyl and A is alkylene, substd. alkylene such as a group represented by formula II, ether, etc., or a group obtd. by combining two or more such groups. In the formula II, each of R5 and R6 is H, alkyl, etc.
申请公布号 JPH10274851(A) 申请公布日期 1998.10.13
申请号 JP19970037872 申请日期 1997.02.21
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO
分类号 G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/039
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