| 摘要 |
PROBLEM TO BE SOLVED: To prevent, for example, a ripple mark from remaining on the surface of a substrate to be treated and uniformly apply a resist liquid, by stopping the supply of the resist liquid, and then rapidly decelerating the rotation of the substrate to be treated, and rotating the substrate to be treated at a low speed while the substrate is shaken and dried. SOLUTION: A nozzle-retaining body 100 is moved in Y direction until the discharge port of a resist nozzle 86 reaches the center (the center of a semiconductor wafer W) of a spin chuck, and a resist liquid is dropped from the discharge port of the resist nozzle 86 to the center of the surface of the rotary semiconductor wafer W, thus applying a resist to the surface of the wafer. When the resist is applied, the speed of a drive motor 54, namely that of the semiconductor wafer W, is controlled in the following manner, The wafer W starts to be rotated in a process 1, a thinner is supplied to the center of the wafer W from a thinner nozzle 101 in a process 2 in one second after the start, the wafer W continues to be rotated in a process 3, but the supply of the thinner is stopped and the thinner is spread uniformly. |
