| 摘要 |
PROBLEM TO BE SOLVED: To change the taper of the side wall of an opening to be etched in a single plasma etching chamber, and at the same time reduce expenses and a raw material treatment time under the conditions where a polymer is deposited on a side wall by changing the reaction conditions during etching. SOLUTION: A via hole 210 is formed in a dielectric layer 220 for interconnection with a conductive layer 330, thus forming an angleβat a top part and an angleαat a lower part. A polymer layer 235 is formed in an etching treatment, the first polymer of the treatment is formed on a side wall 231 of a via, and a dielectric material below it is protected and an etching treatment progress spreads from the side wall toward a center 232 of the via hole at one angle. Anglesαandβof a tapered side wall are inversely proportional to the growth speed of the polymer when the polymer is deposited on the side wall. The strength of a magnetic field in the etching chamber is directly proportional to a polymer formation speed and the increase in a magnetic field increases the ionization of plasma and a polymer formation speed.
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