| 摘要 |
PROBLEM TO BE SOLVED: To correct the scattering in a resist dimension within an exposure region without correcting a mask, expand a process margin, and eliminate the need for correcting the mask again, by exposing the specific region of the substrate where the resist is applied. SOLUTION: Only an L-shaped pattern 12 being arranged at the outermost edge of a combination pattern has a different proximity effect from other line- and-paste patterns 11, namely repetition patterns, so that the resist dimension of the L-shaped pattern 12 may deviate from a design value when an exposure dose is applied to a photo sensitive substrate where a resist is applied while being matched to the repetitive patterns 11. Therefore, when the resist dimension of the L-shaped pattern 12 becomes larger than the design dimension, a line width can be aligned by applying a bias exposure only to the L-shaped pattern 12. In this bias exposure, the exposure is made by exposure light by which no corresponding L-shaped pattern 12 is exposed. |
