| 摘要 |
PROBLEM TO BE SOLVED: To accurately and easily form the three-dimensional microscopic structure of a crystal Si. SOLUTION: The thin film of an oxidized stopper layer 24 is formed at an Si substrate 22 with an SOI(silicon on insulator) structure. Then, the thin film of a resist 25 for forming a pattern is formed on the stopper layer 24, and energy rays 26 such as electron rays are selectively applied and a latent image 27 is formed at the resist 25. A desired pattern of the resist 25 is formed on the stopper layer 24 by performing development treatment. Further, by performing an etching treatment with the desired pattern of the resist 25 as a mask, the pattern of the stopper layer 24 is formed. After the mask pattern of the resist 25 is eliminated, an oxidation treatment is performed. |
