发明名称 |
Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding |
摘要 |
A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.
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申请公布号 |
US5821138(A) |
申请公布日期 |
1998.10.13 |
申请号 |
US19960602324 |
申请日期 |
1996.02.16 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;ARAI, YASUYUKI;TERAMOTO, SATOSHI |
分类号 |
G02F1/13;A42B3/22;G02F1/1333;G02F1/136;G02F1/1368;G09F9/30;H01L21/02;H01L21/20;H01L21/265;H01L21/336;H01L21/77;H01L27/12;H01L27/32;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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