发明名称 PRODUCTION OF OXIDE HAVING LAYERED CRYSTAL STRUCTURE
摘要 PROBLEM TO BE SOLVED: To readily produce a large crystal of layered crystal structure oxide. SOLUTION: Bi2 O3 used as a flux, SrCO3 and Ta2 O5 are mixed to afford a raw material M and the raw material M is charged to a crucible. The crucible is inserted into a heating furnace 20 and the raw material M is heated at a melting point or above (e.g. >=1,350 deg.C and <=1,500 deg.C) of the raw material for a prescribed time to completely melt the raw material M (in a first heating step). Then, the raw material M is heated at a temperature lower than the melting point (e.g. >=1,000 deg.C and <=1,300 deg.C) for a prescribed time to vaporize the raw material M (in a second heating step). The heating furnace 20 has a temperature gradient in the vertical direction and a temperature of upper side wall 11a of the crucible 10 is lower than a heating temperature of raw material M. Thereby, crystal of layered crystal structure oxide [(Bi2 Sr1 Ta2 O9 ) as a stoichiometric composition formula] comprising Bi, Sr, Ta and O is deposited on the upper side wall of the crucible 10.
申请公布号 JPH10273396(A) 申请公布日期 1998.10.13
申请号 JP19970076155 申请日期 1997.03.27
申请人 SONY CORP 发明人 NAGASAWA NAOMI;MACHIDA AKIO;AMI TAKAAKI;SUZUKI MASAYUKI
分类号 C30B23/00;C23C18/12;C30B29/22;H01L21/203;H01L21/316;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108;H01L39/24 主分类号 C30B23/00
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