发明名称 |
Device for generating and regulating a gate voltage in a non-volatile memory |
摘要 |
The present invention relates to a device for generating and regulating a gate voltage in an electrically programmable non-volatile memory with single power supply of the type comprising a voltage booster driven by a clock signal applied to a first input terminal thereof and having an output terminal on which is produced a signal with higher voltage. This device comprises a lower regulator block and a programming switching block inserted in parallel each other between said output terminal of the voltage booster and an output terminal of the gate voltage generating and regulating device with said lower regulator block being driven by a plurality of switching signals to supply on the output terminal of the device a plurality of regulated voltages and feed the control gates of the non-volatile memory cells.
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申请公布号 |
US5822247(A) |
申请公布日期 |
1998.10.13 |
申请号 |
US19960775111 |
申请日期 |
1996.12.30 |
申请人 |
SGS-THOMSON MICROELECTRONICS, S.R.L. |
发明人 |
TASSAN CASER, FABIO;VILLA, CORRADO;BARTOLI, SIMONE |
分类号 |
G11C5/14;G11C8/08;G11C16/16;G11C16/30;G11C16/34;(IPC1-7):G11C16/04 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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