发明名称 DEVICE FOR CONTROLLING BACK GAS PRESSURE UNDER SEMICONDUCTOR WAFER
摘要 <p>PROBLEM TO BE SOLVED: To enable a wafer to be uniformly supported on the surface of a support member and protected against cracks without adding an additional manufacturing cost by a method, wherein a flow of back gas under a wafer supported by an electrostatic chuck is self-controlled. SOLUTION: A semiconductor wafer 110 is held on a surface 108 of an electrostatic chuck 106 mounted on a pedestal 102. The pedestal 102 is provided with at least a gas inlet 112, through which thermally conductive gas is introduced into a gap space 107 between the rear of a wafer and the surface 108 of the chuck 106. The gas inlet 112 is arranged at the center of the pedestal 102, an opening 116 is formed inside the electrostatic chick 106 to enable a flow of gas to flow from the pedestal 102 to the rear of the wafer 110. Gas distributing grooves are provided in the surface 108 of the electrostatic shuck, so as to make the gas which traverses the rear of the wafer 110 uniform is distribution. The gas distributing grooves are provided extending outwards radial from the gas inlet 112.</p>
申请公布号 JPH10275854(A) 申请公布日期 1998.10.13
申请号 JP19970370394 申请日期 1997.12.26
申请人 APPLIED MATERIALS INC 发明人 PARKHE VIJAY
分类号 B23Q3/15;H01L21/683;H02N13/00;(IPC1-7):H01L21/68 主分类号 B23Q3/15
代理机构 代理人
主权项
地址