发明名称 |
Semicoductor device having a hetero interface with a lowered barrier |
摘要 |
A semiconductor device includes a first semiconductor layer formed of first semiconductor, a second semiconductor layer formed on the first semiconductor layer and formed of second semiconductor of a group different from a group to which the first semiconductor belongs, and a third semiconductor layer formed between the first and second semiconductor layers, the third semiconductor layer being one of a layer formed of third semiconductor of the same group as the first semiconductor and having an impurity concentration higher than the first semiconductor layer and a layer formed of fourth semiconductor of the same group as the second semiconductor and having an impurity concentration higher than the second semiconductor layer.
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申请公布号 |
US5821555(A) |
申请公布日期 |
1998.10.13 |
申请号 |
US19960618823 |
申请日期 |
1996.03.20 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAITO, SHINJI;ONOMURA, MASAAKI;NISHIKAWA, YUKIE;ISHIKAWA, MASAYUKI;PARBROOK, PETER JAMES |
分类号 |
H01L33/00;H01L33/02;(IPC1-7):H01L33/00;H01L29/26 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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