发明名称 PHOTOVOLATIC DEVICE AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To electrically divide a metallic electrode film through the insulated division areas and eliminate scattering of a film so as to prevent short circuit between electrodes by making the division area of the metallic electrode highly resistant, using a wire in which a plasma is generated. SOLUTION: A transparent electrode film 2, a semiconductor film 5 and a metallic electrode film 7 are pilled up successively on a glass substrate 1 and a laser light is emitted thereto from the light incident surface of the substrate 1 to form division grooves 3 and 6. A division area 18 is formed on a metallic electrode film 7 in a manner to be parallel to the separation groove 6 of a semiconductor film 5, by using a wire in which a plasma is generated through a plasma CVM device, and a plurality of power generating elements 9 are formed thereon. Thus, the depth of the division area 18 is made to cover the whole direction of the film thickness and the area 18 is made to be highly resistant by using a plasma.
申请公布号 JPH10270731(A) 申请公布日期 1998.10.09
申请号 JP19970090304 申请日期 1997.03.24
申请人 SANYO ELECTRIC CO LTD 发明人 HASHIMOTO HARUHISA;HAKU HISAO;KAMEDA MASAAKI
分类号 H01L31/04;H01L31/042 主分类号 H01L31/04
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