SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a capacitor cell whose formation method is easy and relatively high integration is possible in a semiconductor memory, etc., wherein a ferroelectric thin film which shows ferroelectricity by using an epitaxial effect or a ferroelectric thin film wherein ferroelectricity is reinforced by the eptiaxial effect is used. SOLUTION: The device is constituted having a memory cell array wherein a memory cell constituted of a transistor and a capacitor is arranged in a matrix on a semiconductor board 1. A barrier metallic layer 12, a lower electrode layer 13 and a ferrolelectric film 14 are subjected to eptiaxial growth or orientation growth one by one for the side of the board/inside a contact hole manufactured on a source or drain electrode 6 of the transistor or its extended conductive layer for constituting the capacitor.