| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the method for forming a conducting layer for connecting an opening that is not oxidized during the manufacturing process, and the semiconductor device having the conducting layer such as this. SOLUTION: This semiconductor device comprises a substrate having a concave part, a readily oxidizable conducting layer 20 which fills at least a part of the concave part for forming a plug in the above described concave part and is formed at least on a part of the substrate, and a protecting layer 22 made of metal, which is at least partially diffused into the conducting layer 20. The protecting layer 22 made of metal has the higher affinity for oxygen than the conducting layer 20 and absorbs the oxygen during the reflow process of the conducting layer 20.</p> |
