| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a transfer mask which has high transfer accuracy, can be manufactured in a short time, and can be manufactured easily by forming the cross-sectional shape of an opening for forming a specific device pattern requiring higher dimensional accuracy in a reversely tapered shape within a prescribed range. SOLUTION: Of the openings used for forming a device pattern of <=0.2μm requiring higher dimensional accuracy among the device pattern forming openings of a transfer mask, the opening which is most apt to be tapered in the normal direction is set at a taper angle of >=90 deg. and the cross sections of the other openings can be shaped in reversely tapered shapes. Since the size of the opening on the beam incident-side is maintained at a designed value even when the opening has a slightly reversely tapered shape, the beam formed through this opening meets the designed transfer accuracy. In this case, dry etching conditions, such as the etching temperature, etching gas, etc., can be controlled by adjusting the conditions.</p> |
