SEMICONDUCTOR THIN FILM TRANSISTOR, ITS PRODUCTION, SEMICONDUCTOR THIN FILM TRANSISTOR ARRAY SUBSTRATE, AND LIQUID CRYSTAL INDICATION DEVICE USING THE SEMICONDUCTOR THIN FILM TRANSISTOR ARRAY SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To reduce the ON resistance of a thin film transistor and reduce the distribution of thin film transistor characteristic by doping impurities into the source and drain areas of an intrinsic semiconductor layer to form an n layer and form a channel area to which no impurities are doped to be as an i layer. SOLUTION: A film is formed on a gate insulation film 3 and an i layer as to cover the upper layer of a gate electrode 2 on an insulation substrate, and a resist is developed to cover a source area, drain area and channel area, and it is patterned by etching so as to form a pattern for the i layer. Then the resist is removed and the resist in the channel area on the i layer of a thin film transistor is developed, and impurity ions are implanted into it to form an n layer 4 in the source and drain areas of the i layer. A phosphorus as an impurity for ion implantation is implanted to form an n-type semiconductor layer by generating a plasma from a phosphine gas.