发明名称 DATA INPUT CIRCUIT OF SYNCHRONOUS-TYPE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To enable a quick data writing operation by a method wherein one signal is selected among the 1st and 2nd internal strobe signals of a 1st edge detector or the 1st and 2nd internal clock signals of a 2nd edge detector by a selective control signal applied from an external device. SOLUTION: When an edge detector 200 detects the rising edge of an external clock signal CLK, it generates a 1st internal clock signalϕCLK1 and, when it detects the falling edge of the external clock signal CLK, it generates a 2nd internal clock signalϕCLK2. Registers 202a and 202b are synchronized with the inputted 1st and 2nd internal clock signalsϕCLK1 andϕCLK2 respectively and store odd number order data D1 , D3 ... and even number order data D2 , D4 ... of an input data string DINDM inputted from an external device respectively. Writing drivers 204a and 204b are activated by a timing control circuit 308 and transmit corresponding data pairs D1 -D4 one after another. Successively, a column decoder 209 is also activated in the same way to select a column corresponding to an address.</p>
申请公布号 JPH10269781(A) 申请公布日期 1998.10.09
申请号 JP19980068241 申请日期 1998.03.18
申请人 SAMSUNG ELECTRON CO LTD 发明人 RI TEIBAI
分类号 G11C11/413;G11C7/10;G11C11/401;G11C11/407;G11C11/409;(IPC1-7):G11C11/413 主分类号 G11C11/413
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