| 摘要 |
A thin film transistor (TFT) has a substrate (141) which bears a gate (149) of double layer structure comprising a relatively wide tensile strained first metallic layer (143) and a relatively narrow compressively strained second metallic layer (145). Also claimed is a similar TFT which additionally includes a first insulating layer (151) over the substrate and the gate, a semiconductor layer (153) on the insulating layer portion above the gate, an ohmic contact layer (155) at both sides of the semiconductor layer, source and drain electrodes (157, 159) on the ohmic contact layer and extending onto the first insulating layer, and a second insulating layer covering the semiconductor layer, the electrodes and the first insulating layer. Further claimed are TFT production methods, in which a single photosensitive agent of predetermined width (w1) is formed as a mask for single stage etch structuring of the metallic layers. |
