| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a structure of a novel mask for manufacturing semiconductor devices and manufacturing method thereof wherein image displacement, which occurs in manufacturing masks for manufacturing semiconductor devices, can be suppressed to a minimum. SOLUTION: A method of manufacturing masks for manufacturing semiconductor device comprises the steps of forming an interlayer film 25 on a first silicon layer 24, further forming a second silicon layer 26 on the interlayer film 25 selectively etching the second silicon layer 26 to form an opening therein, forming a light-shielding film 28 in the opening, and removing the second silicon layer 26. Subsequently, a predetermined region of the first silicon layer 24 is etched to expose the lower surface of the interlayer film 25. After forming a thin film layer 23 on the entire lower surface of the resulting structure, a predetermined region of the interlayer film 25 is etched to permit the upper surface of the thin film layer 23 to be exposed.</p> |
