PRODUCTION OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the accuracy and uniformity of resist patterns by setting the phase shift quantity between phase and non-phase shift transmissible regions and/or the sizes of the respective transmissible regions. SOLUTION: The phase shift quantity between the phase shift transmissible regions and the non-phase shift transmissible regions and any one of the sizes of the respective transmissible regions are so set that the phases of the sum of the amplitude of the diffracted image of the light passed through the respective transmissible region and the amplitude of the diffracted image of the light transmitted through the light shielding films of the peripheries of the respective transmissible regions invert 180 deg. on the image plane from each other with respect to the phase shift transmissible regions and non-phase shift transmissible regions adjacent the each other for the fine patterns most requiring the phase shift effect. Namely, the quantity and size described above are so set that the amplitude C' of the diffracted image on the image plane of the light past the phase shift apertures attains C'=CO-2B=A-2B with respect to the amplitude A of the diffracted image on the image plane of the light past the non-phase shift apertures and the amplitude B of the diffracted image on the image plane of the light transmitted through the Cr regions. At this time, the phase shift region: C'+B=-A-B and the non-phase shift region: A+B are attained.