| 摘要 |
PROBLEM TO BE SOLVED: To ensure a high sensitivity high accuracy semiconductor inertia sensor which does not require laser processing, which is suitable for high volume production, and which has low parasitic capacitance and has excellent interelectrode gap formation accuracy. SOLUTION: A laminate is formed which includes a second single crystal silicon layer 52, a second oxide film 42, a first single crystal silicon layer 51, a first oxide film 41, and a second silicon wafer 22. Then, the second single crystal silicon layer and the second oxide film are selectively etched and removed to form a spacer layer 24 composed of the second single crystal silicon layer and the second oxide film. The first single crystal silicon layer is selectively etched and removed to form a structure including a movable electrode 26 composed of the second silicon wafer, first oxide film, and single crystal silicon, fixed electrodes 27, 28 composed of the single crystal silicon, and the spacer layer, and the structure is joined with a glass substrate 10 through the spacer layer 24. The second silicon wafer and the first oxide film are etched and removed in succession to configure the semiconductor inertia sensor 30. |
