发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To ensure on/off of a current control MOS transistor(TR) in the standby state even when a low voltage is selected for a power supply voltage VDD by applying a voltage of <=0 V or higher than VDD to a gate of the current control MOS transistor(TR) in the standby state in a CMOS logic circuit. SOLUTION: A threshold level of TRs MP1, MN1, being components of a CMOS logic circuit CM is selected lower than a usual level. A threshold level of a current control P-channel MOS TR MP2 in the standby state is selected higher than a threshold level of the TRs MP1, Mn1 being components of the CMOS logic circuit CM. A level conversion circuit 10 applies on/off control to the P-channel MOS TR MP2 by providing an output of a low level that is a negative voltage and an output of a high level that is the same voltage VDD as that of a 1st power supply line P1 depending on high/low levels of a signal applied to a control input terminal SIG.
申请公布号 JPH10270993(A) 申请公布日期 1998.10.09
申请号 JP19970073873 申请日期 1997.03.26
申请人 TOKYO UNIV;TOSHIBA CORP 发明人 FUJITA TETSUYA;KURODA TADAHIRO;MATSUBARA GENSOU;SAKURAI TAKAYASU
分类号 H01L21/8238;G05F3/24;G11C11/407;H01L27/092;H03K17/06;H03K17/687;H03K19/00;H03K19/0948 主分类号 H01L21/8238
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