| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce production of an etching residue in etching in a method of manufacturing a liquid crystal display device by suppressing an influence of a contamination layer caused by an oxide layer and a resist, etc., on the surface of an n type amorphous silicon layer 5. SOLUTION: An amorphous silicon layer 4 and an n type amorphous silicon layer 5 both on a SiN layer 3 are first etched with mixture gas of fluorine gas, such as SF6 having a low selection ratio (amorphous silicon layer 4/SiN layer 3) and oxygen to remove an oxide layer and a contaminated layer on the surface relatively satisfactorily. Then, a remaining film is etched using mixture gas of fluorine gas having a high selection ratio such as SF6, oxygen, and fluorocarbon or chlorine gas. Thus, since the selection ratio of etching gas is high, the etching is achieved without overetching of a prime coat film.</p> |
