| 摘要 |
PROBLEM TO BE SOLVED: To enable light emission with an excitor at a room temperature by providing a zinc oxide thin film into which magnesium is solid-dissolved, in an optical semiconductor device containing groups II oxide. SOLUTION: A thin film of an optical semiconductor device containing group II oxide is manufactured using a laser molecular beam epitaxy method. On a sapphire substrate, a thin film, into which a magnesium composition is solid- dissolved by 4-10 mol%, is formed using a zinc oxide sintered body containing magnesium by, for example, 0-18 mol% as a raw material target. A component of raw material solid is coagulated in a moment on the substrate, and a crystal is formed untill a material becomes steady in a thermodynamic equilibrium condition at a substrate temperature, so that a zinc oxide thin film, into which a magnesium containing a composition and a structure that are not allowed thermodynamically is solid-dissolved, is manufactured. Thus a highly crystalline thin film is manufactured in a laser molecular beam epitaxy method, and light emission in a recombination process of an excitor is enabled at a room temperature. |
