| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which can be miniaturized and light weighted. SOLUTION: This semiconductor light-emitting device is constituted of a emission diode 10 and a resistance element 20, respectively, formed on a sapphire substrate 1. The emission diode 10 comprises an n-type GaN layer 2a, an n-type InGaN emission layer 3 and a p-type GaN layer 4 formed on the sapphire substrate 1 in this order. A translucent electrode 5 and a pad electrode 7 are formed on the p-type GaN layer 4. The resistance element 20 is made of an n-type GaN layer 2b formed on the sapphire substrate 1. An n-side electrode 6 is further formed on the n-type GaN layer 2b. |
