| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is improved in durability to surge currents. SOLUTION: In a semiconductor laser device having a laser diode 1 which outputs light in accordance with an applied voltage, a protective element (depletion FET) 2 that shows an impedance which is sufficiently smaller than that of the diode 1 when no voltage is impressed upon the control terminal T3 of the laser device and another impedance which is sufficiently larger than that of the diode 1 when a prescribed voltage is impressed upon the terminals T3 is connected in parallel with the diode 1 and, at the same time, housed together with the diode 1 in the same package 10. |
