| 摘要 |
PROBLEM TO BE SOLVED: To decrease the number of manufacturing processes, by enabling the reduction of the pitches of charge transfer devices comparatively simply and forming transfer electrodes in single-layer structure, to improve reliability and to prevent the possibility of the generation of a potential dip under a section between the adjacent electrodes without increasing the amplitude of transfer pulses. SOLUTION: All of each transfer electrode 61 t, 61 s, 62 t, 62 s consist of electrode layers in the same layer, and the transfer electrodes 61 t, 62 t on each transfer section 3 receiving transfer pulsesϕin the same phase and transfer electrodes 61 s, 62 s on storage sections 4 situating closer to the transfer sides than the transfer electrodes 61 t, 62 t are formed integrally without interposing openings. Impurity regions 3a for annihilating potential dips are formed under openings 13 among the adjacent transfer electrodes 61 , 62 , receiving transfer pulses having mutually different phase in a self-alignment manner.
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